Ultra shallow P+/N junctions using plasma immersion ion...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2005 Vol. 237; Iss. 1-2

Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1 μm CMOS devices

Frank Torregrosa, Cyrille Laviron, Frédéric Milesi, Miguel Hernandez, Hasna Faïk, Julien Venturini
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Volume:
237
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.nimb.2005.04.108
File:
PDF, 516 KB
english, 2005
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