Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2005 Vol. 237; Iss. 1-2
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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI
J.J. Hamilton, E.J.H. Collart, B. Colombeau, C. Jeynes, M. Bersani, D. Giubertoni, J.A. Sharp, N.E.B. Cowern, K.J. KirkbyVolume:
237
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.nimb.2005.04.112
File:
PDF, 144 KB
english, 2005