Ion beam synthesis of Te and Bi nanoclusters in silicon:...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2006 Vol. 242; Iss. 1-2

Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field

M. Kalitzova, A. Peeva, V. Ignatova, O.I. Lebedev, G. Zollo, G. Vitali
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Volume:
242
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.nimb.2005.08.017
File:
PDF, 319 KB
english, 2006
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