A Sub-200-mV Voltage-Scalable SRAM With Tolerance of Access...

IEEE Transactions on Circuits and Systems II: Express Briefs 2010 / 06 Vol. 57; Iss. 6

A Sub-200-mV Voltage-Scalable SRAM With Tolerance of Access Failure by Self-Activated Bitline Sensing

Shien-Chun Luo,, Lih-Yih Chiou,
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Volume:
57
Language:
english
Journal:
IEEE Transactions on Circuits and Systems II: Express Briefs
DOI:
10.1109/tcsii.2010.2048360
Date:
June, 2010
File:
PDF, 721 KB
english, 2010
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