Synthesis of buried silicon oxynitride layers by ion...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2006 Vol. 245; Iss. 2

Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures

A.D. Yadav, Rucha H. Polji, Vibha Singh, S.K. Dubey, T.K. Gundu Rao
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Volume:
245
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.nimb.2005.11.160
File:
PDF, 252 KB
english, 2006
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