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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain
Hong-Nien Lin,, Hung-Wei Chen,, Chih-Hsin Ko,, Chung-Hu Ge,, Horng-Chih Lin,, Tiao-Yuan Huang,, Wen-Chin Lee,Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609289
File:
PDF, 493 KB
english, 2005