[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories
Toledano-Luque, M., Degraeve, R., Kaczer, B., Tang, B., Roussel, Ph. J., Weckx, P., Franco, J., Arreghini, A., Suhane, A., Kar, G. S., Van den bosch, G., Groeseneken, G., Van Houdt, J.Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6479009
File:
PDF, 633 KB
english, 2012