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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology
Vestling, L., Edholm, B., Olsson, J., Tiensuu, S., Soderbarg, A.Year:
1997
Language:
english
DOI:
10.1109/ispsd.1997.601427
File:
PDF, 503 KB
english, 1997