Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2007 Vol. 261; Iss. 1-2
Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon
J.H. Liang, S.C. WangVolume:
261
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.nimb.2007.03.067
File:
PDF, 366 KB
english, 2007