Boron depth profiles and residual damage following rapid...

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

J.H. Liang, S.C. Wang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
261
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.nimb.2007.03.067
File:
PDF, 366 KB
english, 2007
Conversion to is in progress
Conversion to is failed