Properties of Molecular Beam Epitaxial In x Ga 1- x As ( x ≈0.53) Layers Grown on InP Substrates
Asahi, Hajime, Okamoto, Hiroshi, Ikeda, Mutsuo, Kawamura, YuichiVolume:
18
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.18.565
Date:
March, 1979
File:
PDF, 1.25 MB
1979