Ion implantation in 4H–SiC

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2008 Vol. 266; Iss. 8

Ion implantation in 4H–SiC

J. Wong-Leung, M.S. Janson, A. Kuznetsov, B.G. Svensson, M.K. Linnarsson, A. Hallén, C. Jagadish, D.J.H. Cockayne
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Volume:
266
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.nimb.2007.12.049
File:
PDF, 530 KB
english, 2008
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