Electrical properties of silicon diodes with p+n junctions...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2008 Vol. 266; Iss. 23

Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions

N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, A.V. Petrov, S.B. Lastovskii, D. Fink, A. Wieck
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Volume:
266
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.nimb.2008.09.001
File:
PDF, 556 KB
english, 2008
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