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[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Electron trapping and interface trap generation in drain extended pMOS transistors
Moens, P., Bauwens, F., Nelson, M., Tack, M.Year:
2005
Language:
english
DOI:
10.1109/RELPHY.2005.1493147
File:
PDF, 956 KB
english, 2005