[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Characteristics of silicon nano-scale devices
Hiramoto, T., Majima, H.Year:
2000
Language:
english
DOI:
10.1109/sispad.2000.871237
File:
PDF, 455 KB
english, 2000