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[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - The hot-carrier degradation mechanism of p-DDDMOS transistor with different p-drift dosage
Liu, Siyang, Sun, Weifeng, Wan, Weijun, Qian, Qinsong, Sun, HuYear:
2011
Language:
english
DOI:
10.1109/edssc.2011.6117684
File:
PDF, 164 KB
english, 2011