[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation
Hobbs, C., Hegde, R., Maiti, B., Tseng, H., Gilmer, D., Tobin, P., Adetutu, O., Huang, F., Weddington, D., Nagabushnam, R., O'Meara, D., Reid, K., La, L., Grove, L., Rossow, M.Year:
1999
Language:
english
DOI:
10.1109/vlsit.1999.799379
File:
PDF, 191 KB
english, 1999