[IEEE 2012 IEEE International Electron Devices Meeting...

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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced Ion and nearly defect-free channels

Hsu, Shu-Han, Chang, Hung-Chih, Chu, Chun-Lin, Chen, Yen-Ting, Tu, Wen-Hsien, Hou, Fu Ju, Lo, Chih Hung, Sung, Po-Jung, Chen, Bo-Yuan, Huang, Guo-Wei, Luo, Guang-Li, Liu, C. W., Hu, Chenming, Yang, Fu
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Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6479090
File:
PDF, 1.45 MB
english, 2012
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