Improved Resistive Switching Reliability in Graded NiO...

IEEE Electron Device Letters 2010 / 07 Vol. 31; Iss. 7

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Myoung-Jae Lee,, Chang Bum Lee,, Dongsoo Lee,, Seung Ryul Lee,, Jihyun Hur,, Seung-Eon Ahn,, Man Chang,, Young-Bae Kim,, U-In Chung,, Chang-Jung Kim,, Dong-Sik Kim,, Hosun Lee,
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2048886
Date:
July, 2010
File:
PDF, 304 KB
english, 2010
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