[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A lightly doped shallow junction extension for the high breakdown voltage by double diffusion process using the taper SiO/sub 2/ mask

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