Growth of High-Quality Ge Epitaxial Layers on Si (100)

Japanese Journal of Applied Physics 2003 / 5 Vol. 42; Iss. Part 2, No

Growth of High-Quality Ge Epitaxial Layers on Si (100)

Luo, Guangli, Yang, Tsung-Hsi, Chang, Edward Yi, Chang, Chun-Yen, Chao, Koung-An
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.42.l517
Date:
May, 2003
File:
PDF, 129 KB
english, 2003
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