Direct Current and Microwave Characteristics of Sub-micron...

Japanese Journal of Applied Physics 2012 / 10 Vol. 51

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.111001
Date:
October, 2012
File:
PDF, 807 KB
english, 2012
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