Electrical Characterization of Leaky Charge-Trapping...

IEEE Electron Device Letters 2007 / 05 Vol. 28; Iss. 5

Electrical Characterization of Leaky Charge-Trapping High-$\kappa$ MOS Devices Using Pulsed $Q$– $V$

Martens, K., Rosmeulen, M., Kaczer, B., Groeseneken, G., Maes, H. E.
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.895431
Date:
May, 2007
File:
PDF, 137 KB
english, 2007
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