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SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method
Hsin-Chiang You,, Tze-Hsiang Hsu,, Fu-Hsiang Ko,, Jiang-Wen Huang,, Wen-Luh Yang,, Tan-Fu Lei,Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2006.879026
Date:
August, 2006
File:
PDF, 156 KB
english, 2006