Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated...

Applied Physics Express 2008 / 8 Vol. 1

Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates

Asamizu, Hirokuni, Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
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Volume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.1.091102
Date:
August, 2008
File:
PDF, 96 KB
english, 2008
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