[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - A novel surface potential-based mobility degradation model of thin-oxide-MOSFET for circuit simulation
Jia, Kan, Sun, Weifeng, Shi, LongxingYear:
2011
Language:
english
DOI:
10.1109/edssc.2011.6117739
File:
PDF, 285 KB
english, 2011