Realization of InGaN laser diodes above 500 nm by growth...

Applied Physics Express 2014 / 11 Vol. 7; Iss. 11

Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region

Liu, Jianping, Li, Zengcheng, Zhang, Liqun, Zhang, Feng, Tian, Aiqing, Zhou, Kun, Li, Deyao, Zhang, Shuming, Yang, Hui
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Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.7.111001
Date:
November, 2014
File:
PDF, 790 KB
english, 2014
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