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[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - An improved method for determining the inversion layer mobility of electrons in trench MOSFETs
van den Heuvel, M.G.L., Hueting, R.J.E., Hijzen, E.A., in 't Zandt, M.A.A.Year:
2003
Language:
english
DOI:
10.1109/ISPSD.2003.1225257
File:
PDF, 308 KB
english, 2003