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Characterization of a -plane InGaN light-emitting diodes with a SiN x interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition
Yoo, Geunho, Min, Daehong, Lee, Kyseung, Jang, Jongjin, Moon, Seunghwan, Chae, Sooryong, Kim, Jaehwan, Nam, OkhyunVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.111001
Date:
November, 2014
File:
PDF, 1.20 MB
english, 2014