A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with...

Japanese Journal of Applied Physics 2000 / 2 Vol. 39; Iss. Part 2, No

A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

Kitatani, Takeshi, Nakahara, Kouji, Kondow, Masahiko, Uomi, Kazuhisa, Tanaka, Toshiaki
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.39.l86
Date:
February, 2000
File:
PDF, 149 KB
english, 2000
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