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[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Characterization of hot carrier degradation in n-type poly-Si TFTs under dynamic drain pulse Stress with DC gate bias
Zhang, Meng, Wang, Mingxiang, Lu, Xiaowei, Wong, ManYear:
2010
Language:
english
DOI:
10.1109/ipfa.2010.5532002
File:
PDF, 257 KB
english, 2010