Bi-layer Si x N y passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown
Lee, K B, Green, R T, Houston, P A, Tan, W S, Uren, M J, Wallis, D J, Martin, TVolume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/12/125010
Date:
December, 2010
File:
PDF, 595 KB
english, 2010