[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

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