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A New Spin-Functional Metal–Oxide–Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET
Shuto, Yusuke, Nakane, Ryosho, Wang, Wenhong, Sukegawa, Hiroaki, Yamamoto, Shuu'ichirou, Tanaka, Masaaki, Inomata, Koichiro, Sugahara, SatoshiVolume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.3.013003
Date:
January, 2010
File:
PDF, 635 KB
english, 2010