InGaN Channel High-Electron-Mobility Transistors with...

Applied Physics Express 2013 / 01 Vol. 6; Iss. 1

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f T / f max of 260/220 GHz

Wang, Ronghua, Li, Guowang, Karbasian, Golnaz, Guo, Jia, Faria, Faiza, Hu, Zongyang, Yue, Yuanzheng, Verma, Jai, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Snider, Gregory, Fay, Patrick, Jena, Debdeep,
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Volume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.6.016503
Date:
January, 2013
File:
PDF, 2.59 MB
english, 2013
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