Diffusion of Point Defects in Silicon Crystals during...

Japanese Journal of Applied Physics 1993 / 4 Vol. 32; Iss. Part 1, No

Diffusion of Point Defects in Silicon Crystals during Melt-Growth. I -Uphill Diffusion-

Habu, Ryuichi, Yunoki, Isamu, Saito, Takao, Tomiura, Azusa
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.32.1740
Date:
April, 1993
File:
PDF, 1.17 MB
1993
Conversion to is in progress
Conversion to is failed