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[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Material properties of gan grown by radio frequency plasma-assisted molecular beam epitaxy on si
Androulidaki, M., Amimer, K., Tsagaraki, K., Kayambaki, M., Mikroulis, S., Constantinidis, G., Hatzopoulos, Z., Georgakilas, A.Year:
2000
Language:
english
DOI:
10.1109/asdam.2000.889442
File:
PDF, 257 KB
english, 2000