[IEEE International Electron Devices Meeting. Technical...

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[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

Huicai Zhong,, Shin-Nam Hong,, You-Seok Suh,, Lazar, H., Heuss, G., Misra, V.
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Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979543
File:
PDF, 345 KB
english, 2001
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