A new poly-Si TFT structure with air cavities at the...

IEEE Electron Device Letters 2001 / 11 Vol. 22; Iss. 11

A new poly-Si TFT structure with air cavities at the gate-oxide edges

Min-Cheol Lee,, Sang-Hoon Jung,, In-Hyuk Song,, Min-Koo Han,
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Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.962656
Date:
November, 2001
File:
PDF, 138 KB
english, 2001
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