[IEEE 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2012.05.22-2012.05.23)] 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration - AlInAs selective oxidation for GaInAsP/Si hybrid semiconductor laser using surface activated bonding
Hayashi, Yusuke, Osabe, Ryo, Fukuda, Keita, Nishiyama, Nobuhiko, Arai, ShigehisaYear:
2012
Language:
english
DOI:
10.1109/ltb-3d.2012.6238058
File:
PDF, 593 KB
english, 2012