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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module
Lee, Rinus T. P., Hill, R. J. W., Loh, W.-Y., Baek, R.-H., Deora, S., Matthews, K., Huffman, C., Majumdar, K., Michalak, T., Borst, C., Hung, P.Y., Chen, C.-H., Yum, J.-H., Kim, T.-W., Kang, C. Y., WaYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724546
File:
PDF, 2.35 MB
english, 2013