[IEEE International Electron Devices Meeting. Technical...

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[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - 70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications

Matsumoto, T., Maeda, S., Ota, K., Hirano, Y., Eikyu, K., Sayama, H., Iwamatsu, T., Yamamoto, K., Katoh, T., Yamaguchi, Y., Ipposhi, T., Oda, H., Maegawa, S., Inoue, Y., Inuishi, M.
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Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979470
File:
PDF, 351 KB
english, 2001
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