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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Lateral DMOS design for ESD robustness
Duvvury, C., Carvajal, F., Jones, C., Briggs, D.Year:
1997
Language:
english
DOI:
10.1109/iedm.1997.650403
File:
PDF, 361 KB
english, 1997