Study of an SOI SRAM sensitivity to SEU by 3-D device...

IEEE Transactions on Nuclear Science 2004 / 10 Vol. 51; Iss. 5

Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation

Castellani-Coulie, K., Sagnes, B., Saigne, F., Palau, J.-M., Calvet, M.-C., Dodd, P.E., Sexton, F.W.
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Volume:
51
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2004.835076
Date:
October, 2004
File:
PDF, 716 KB
english, 2004
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