[American Vacuum Soc 1999 4th International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA (9-11 May 1999)] 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) - Study of the influence of process parameters on gate oxide degradation during contact etching in MERIE and HDP reactors

The file will be sent to your email address. It may take up to 1-5 minutes before you receive it.

The file will be sent to you via the Telegram messenger. It may take up to 1-5 minutes before you receive it.

Note: Make sure you have linked your account to Z-Library Telegram bot.

The file will be sent to your Kindle account. It may take up to 1–5 minutes before you receive it.

Please note: you need to verify every book you want to send to your Kindle. Check your mailbox for the verification email from Amazon Kindle.