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[American Vacuum Soc 1999 4th International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA (9-11 May 1999)] 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) - Study of the influence of process parameters on gate oxide degradation during contact etching in MERIE and HDP reactors
Poiroux, T., Pascal, F., Heitzmann, M., Berruyer, P., Turban, G., Reimbold, G.Year:
1999
Language:
english
DOI:
10.1109/ppid.1999.798797
File:
PDF, 259 KB
english, 1999