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[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - 3-dimensional process simulation of rapid thermal annealing using a five species point defects diffusion model
Herbaux, J., Senez, V., Hoffmann, T., Bossut, R., Brocard, D.Year:
1999
Language:
english
DOI:
10.1109/sispad.1999.799259
File:
PDF, 444 KB
english, 1999