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Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy
Gossner, Harald, Eisele, Ignaz, Risch, LotharVolume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.2423
Date:
April, 1994
File:
PDF, 968 KB
1994