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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Novel low offset voltage diode using asymmetric threshold voltage MONOS-FET for next generation devices demanding low voltage operation
Ueno, S., Furuta, H., Okumura, Y., Eimori, T., Inoue, Y.Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175875
File:
PDF, 190 KB
english, 2002