[IEEE 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Tainan, Taiwan (2007.12.20-2007.12.22)] 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Perfornance Enhancement for Strained HfO2 nMOSFET with Contact Etch Stop Layer (CESL) under Pulsed-IV Measurement

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