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[American Vacuum Soc 1999 4th International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA (9-11 May 1999)] 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) - Comparison between gate oxide degradation induced by copper dual damascene and conventional aluminum processes
Poiroux, T., Heitzmann, M., Morand, Y., Berruyer, P., Turban, G., Reimbold, G.Year:
1999
Language:
english
DOI:
10.1109/ppid.1999.798842
File:
PDF, 237 KB
english, 1999