[IEEE 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers - San Francisco, CA, USA (6-8 Feb. 1997)] 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers - A 350 MHz 3.3 V 4 Mb SRAM fabricated in a 0.3 μm CMOS process
Braceras, G., Evans, D., Sousa, J., Conner, J.Year:
1997
Language:
english
DOI:
10.1109/isscc.1997.585460
File:
PDF, 1.10 MB
english, 1997